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III-N Based Material Structures and Circuit Modules Based on Strain Management

Details

Project TitleIII-N Based Material Structures and Circuit Modules Based on Strain Management
Track Code28861
Websitehttps://techtransfer.universityofcalifornia.edu/NCD/28861.html?utm_source=AUTMGTP&utm_medium=webpage&utm_term=ncdid_28861&utm_campaign=TechWebsites
Short Description

Researchers from UC Santa Barbara, have created a method and composition to apply uniaxial strain on gallium nitrides to increase mobility and electron velocity. This composition involves modifying the hole or the electron by using a uniaxial strain to alter electronic and photonic device performance and as a result enable a brand new class of circuit embodiments. By using uniaxially strained GaN, the hole effective mass in GaN is reduced to values below the effective mass of electrons resulting in a significant increase in the hole mobility. Conversely, using relaxed InGaN as the channel material, the electron velocity is significantly increased. This provides a reduced electron effective mass, which is critical in reducing electron scattering and enhancing electron velocity. This new way of using strain to engineer group-III nitride properties shows us an exciting pathway of developing complementary GaN technology.

AbstractA method and composition to apply uniaxial strain on gallium nitrides to increase mobility and electron velocity.
 
TagsIII-N, wideband amplifiers, amplifiers, indfeat, indbulk, gallium, engineering
 
Posted DateSep 1, 2017 11:57 AM

Advantages

  • Mobility is increased by 4x
  • Ability to hold substantial voltage (>2V)
  • High frequency, high voltage, and high current

Potential Applications

  • III-N materials
  • Materials in all polarities and crystal planes
  • Push-pull amplifiers
  • Wideband amplifiers
  • Mixed signal architectures

Additional Information

Background

P-type channel devices are limited due to the natural characteristics, including the effective mass of holes, associated with the p channel. The lower the effective mass, the higher the hole mobility in these p-type channel devices. Current complementary metal-oxide semiconductor (CMOS) architectures are the most commonly used architectures in silicon. However, they have not been attractive in GaN because of the limitations of the p-MOSFET that are present. It would be beneficial to find a way to enable a high-performance GaN p-MOSFET which would allow CMOS architectures where both the n-type and p-type devices can be oriented in the same direction.



Additional Technologies by these Inventors



Tech ID/UC Case

28861/2017-99F-0



Related Cases

2017-99F-0

Contact Information

Name : Lauren Dobis

Title :

Department :

Email : dobis@tia.ucsb.edu

Phone :

Address :

Principal Investigator

Name : Elaheh Ahmadi

Department :



Name : Stacia Keller

Department :



Name : Umesh Mishra

Department :

Intellectual Property