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Enhancing Photoluminescence Quantum Yield for High Performance Optoelectrics


Project TitleEnhancing Photoluminescence Quantum Yield for High Performance Optoelectrics
Track Code25573
Short DescriptionNone
AbstractSurface defects dominate the behavior of minority carriers in semiconductors and optoelectronic devices. Photoluminescence quantum yield (QY), which dictates efficiency of optoelectrics such as LEDs, lasers, and solar cells, is extremely low in materials with a large number of surface defects. Researchers at UC Berkeley and Lawrence Berkeley National Laboratory have developed a bis(trifluoromethane) sulfonamide (TFSI) solution for passivation/repair of surface defects in 2D transition metal dichalcogenide (TMDC). This air-stable solution-based chemical treatment provides unmatched photoluminescence QY enhancement to values near 100% without changing the surface morphology. The treatment eliminates defect-mediated non-radiative recombination, which eliminates the low performance limit of TMDC and enhances its minority carrier lifetime. This novel development can address surface passivation in numerous semiconductors which will lead to highly efficient light emitting diodes, lasers and solar cells based on 2D materials.
Tags2D, optoelectronic, semiconductor, passivation, photoluminescence quantum yield, surface defect, QY, metal dichalcogenide, TMDC, SOLAR, chemicals, Processing and Production
Posted DateAug 17, 2017 11:28 AM


  • Quantum yield enhancement to near-unit values
  • Surface recombination velocity reduction
  • Improved Voc in solar cells
  • PL peak intensity increase

Potential Applications

  • LEDs
  • Lasers
  • Solar Cells
  • Semiconductor emitters and detectors

Additional Information

Contact Information

Name : Laleh Shayesteh

Title :

Department :

Email :

Phone : 510-642-4537

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Principal Investigator

Name : Matin Amani

Department :

Name : James Bullock

Department :

Name : Ali Javey

Department :

Name : Daisuke Kiriya

Department :

Name : Der-Hsien Lien

Department :

Intellectual Property

Patent Number : 20170110338

Patent Title :

Patent Application Date :

Patent Publication Date :

Patent Issue Date : Apr 20, 2017

Patent Link :