|Organization Name||University of California, Santa Barbara (UC Santa Barbara)|
|Institutional ID Number||22244|
|Technology Tags or Keywords|
A novel method for growing group-III nitride crystals for use as seeds for ammonothermal growth of group-III nitride crystals.
This technology is available for licensing.
|Technology page URL||http://techtransfer.universityofcalifornia.edu/NCD/22244.html?utm_source=AUTMGTP&utm_medium=webpage&utm_term=ncdid_22244&utm_campaign=TechWebsites|
|Detailed Technology Description||
Researchers at the University of California, Santa Barbara have developed a novel method for growing group-III nitride crystals for use as seeds for ammonothermal growth of group-III nitride crystals. This method results in significantly enhanced growth rates in the non-polar direction, making it possible to grow large crystals with significantly improved crystal quality and wafer curvature. This decreases the time needed to grow the crystals, thereby decreasing the necessary growing time and the manufacturing costs.
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The ammonothermal growth of Gallium Nitride (GaN) is currently the only true bulk crystal growth method that has demonstrated the growth of large GaN crystals up to 2” in size. While this method has proven to be a viable one, it has its shortcomings in that the growth rate in the non-polar direction is approximately 4-5 times slower than those in the polar direction. . A process that can grow crystals in the non-polar direction as fast as the polar direction would greatly increase crystal manufacturing efficiency.
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Tech ID/UC Case22244/2012-020-0