|Organization Name||University of California, Santa Barbara (UC Santa Barbara)|
|Institutional ID Number||22244|
|Technology Tags or Keywords|
A novel method for growing group-III nitride crystals for use as seeds for ammonothermal growth of group-III nitride crystals.
• Reduced fabrication costs
• Increased throughput and size of group-III nitride crystals
• Higher purity through separation of the flux preparation chamber and the growth chamber
• Ammonothermal growth of III nitride crystals
• Flux method growth of III nitride crystals
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|Technology page URL||http://techtransfer.universityofcalifornia.edu/NCD/22244.html?utm_source=AUTMGTP&utm_medium=webpage&utm_term=ncdid_22244&utm_campaign=TechWebsites|
|Detailed Technology Description||
Researchers at the University of California, Santa Barbara have developed a novel method for growing group-III nitride crystals for use as seeds for ammonothermal growth of group-III nitride crystals. This method results in significantly enhanced growth rates in the non-polar direction, making it possible to grow large crystals with significantly improved crystal quality and wafer curvature. Researchers have also developed a method of growing a bulk group-III nitride crystal using the flux method through preparing the flux prior to bringing it in contact with the growing crystal.
The ammonothermal growth of Gallium Nitride (GaN) is currently the only true bulk crystal growth method that has demonstrated the growth of large GaN crystals up to 2” in size. While this method has proven to be a viable one, it has its shortcomings in that the growth rate in the non-polar direction is approximately 4-5 times slower than those in the polar direction. . A process that can grow crystals in the non-polar direction as fast as the polar direction would greatly increase crystal manufacturing efficiency.
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Tech ID/UC Case22244/2012-020-0