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Use of Flux Method to Grow Seed Crystals for Ammonothermal Growth of Group-III Nitride Crystal Crystal Growth

Inventor

  • Name: Shuji Nakamura
  • Name: Siddha Pimputkar

Contact

  • Name: Shaun Juncal
  • Email: juncal@tia.ucsb.edu
  • Phone: 805-893-2073

Information

Organization Name University of California, Santa Barbara (UC Santa Barbara)
Institutional ID Number 22244
Technology Tags or Keywords
SolidState  TIAProcessing  Group-III  Crystal  Substrate  Optics and Photonics  All Optics and Photonics  Design and Fabrication  Processing and Production
Summary

A novel method for growing group-III nitride crystals for use as seeds for ammonothermal growth of group-III nitride crystals.
Technology Benefit

  • Reduction in cost of producing group-III nitride substrates
    • Increased throughput and size of grown group-III nitride crystal
      • Increased crystal growth rates
        • Crystals can be used as seeds for  ammonothermal growth

Technology Applications

  • Bulk Group-III Nitride Crystal & Substrate Growth
    • Optoelectronic Devices, such as LEDs and Laser Diodes
      • Electronic Devices, such as Transistors

        •  

        This technology is available for licensing.

Technology page URL http://techtransfer.universityofcalifornia.edu/NCD/22244.html?utm_source=AUTMGTP&utm_medium=webpage&utm_term=ncdid_22244&utm_campaign=TechWebsites
Detailed Technology Description

Researchers at the University of California, Santa Barbara have developed a novel method for growing group-III nitride crystals for use as seeds for ammonothermal growth of group-III nitride crystals. This method results in significantly enhanced growth rates in the non-polar direction, making it possible to grow large crystals with significantly improved crystal quality and wafer curvature. This decreases the time needed to grow the crystals, thereby decreasing the necessary growing time and the manufacturing costs.
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Additional Information
Background

The ammonothermal growth of Gallium Nitride (GaN) is currently the only true bulk crystal growth method that has demonstrated the growth of large GaN crystals up to 2” in size. While this method has proven to be a viable one, it has its shortcomings in that the growth rate in the non-polar direction is approximately 4-5 times slower than those in the polar direction. . A process that can grow crystals in the non-polar direction as fast as the polar direction would greatly increase crystal manufacturing efficiency.

Additional Technologies by these Inventors
  • Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
  • Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
  • Electrically-Pumped Vertical-Cavity Surface-Emitting Laser (VCSEL)
  • Improved Manufacturing of Semiconductor Lasers
  • Asymmetrically Cladded Laser Diode with Improved Performance
  • Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
  • Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
  • Device Structure for High Efficiency LED
  • Nitride-Based LED with Optimized Efficiency
  • High-Efficiency, White, Single, or Multi-Color LED by Photon Recycling
  • GaN-Based Thermoelectric Device for Micro-Power Generation
  • Mirrorless LED with High Luminous Efficiency
  • Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
  • Method for Growing High-Quality Group III-Nitride Crystals
  • Growth of Planar Semi-Polar Gallium Nitride
  • MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
  • Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
  • Low Temperature Deposition of Magnesium Doped Nitride Films
  • Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
  • Long Wavelength Nonpolar and Semipolar Nitride-Based Laser Diodes
  • Semipolar III-Nitride Laser Diodes with Etched Mirrors
  • Method for Ammonothermal Growth of Highly Pure Group-III Nitrides
  • LED Structure with Low Efficiency Droop for High-Current Applications
  • Low Carrier Loss Device Structure for High Performance Green LEDs
  • Control of Photoelectrochemical (PEC) Etching by Modification of the Local Electrochemical Potential of the Semiconductor Structure
  • Phosphor-Free White Light Source
  • Wafer Bonding For Highly Efficient Nitride-Based LEDs
  • Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
  • LED Device Structures with Minimized Light Re-Absorption
  • High Efficiency and High Brightness LEDs for Various Lighting Applications
  • Enhancement Of Thermoelectric Properties Through Polarization Engineering
  • Improved Gallium Nitride (GaN) Thermoelectric Devices
  • Two dimensionally relaxed III-N buffer layers for LEDs
  • Novel Layer Structure for Semipolar InGaN/GaN LEDs and Laser Diodes
  • GaN-based Green/Red Light-Emitting Diodes With Low Voltage
  • Improved LED Performance via Optimized Polarization Properties
Tech ID/UC Case
22244/2012-020-0
Related Cases
2012-020-0

Patent