|Organization Name||University of California, Santa Barbara (UC Santa Barbara)|
|Institutional ID Number||22365|
|Technology Tags or Keywords|
A novel light-emitting device structure that reduces the effects of these misfit dislocations by maintaining low carrier loss in the active region of the device.
This technology is available for licensing.
|Technology page URL||http://techtransfer.universityofcalifornia.edu/NCD/22365.html?utm_source=AUTMGTP&utm_medium=webpage&utm_term=ncdid_22365&utm_campaign=TechWebsites|
|Detailed Technology Description||
Researchers at the University of California, Santa Barbara have developed a novel light-emitting device structure that reduces the effects of these misfit dislocations by maintaining low carrier loss in the active region of the device. Stress relief and low carrier escape help to increased device performance, thereby boosting optical output power and quality. This approach allows for high performance devices with highly strained active regions by overcoming the negative effects associated with misfit dislocations. By allowing misfit dislocations near the active region, this invention opens up significant design opportunities.
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Today, the performance of green light-emitting diodes (LEDs) and laser diodes (LDs) is much poorer than that of equivalent devices emitting blue or violet light. Manufacturing green LEDs and laser diodes requires use of Indium, however, techniques used to grow Indium and Gallium in the same device degrade crystal quality and can lead to significant carrier loss in the active region because of the introduction of misfit dislocations.
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Tech ID/UC Case22365/2012-239-0