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Low Carrier Loss Device Structure for High Performance Green LEDs

Inventor

  • Name: James Speck
  • Name: Steven DenBaars
  • Name: Shuji Nakamura
  • Name: Matthew Hardy
  • Name: Po Shan Hsu

Contact

  • Name: Shaun Juncal
  • Email: juncal@tia.ucsb.edu
  • Phone: 805-893-2073

Information

Organization Name University of California, Santa Barbara (UC Santa Barbara)
Institutional ID Number 22365
Technology Tags or Keywords
TIALighting  LED  Diode  Optics and Photonics  Lighting  All Optics and Photonics  Other
Summary

A novel light-emitting device structure that reduces the effects of these misfit dislocations by maintaining low carrier loss in the active region of the device.
Technology Benefit

  • Allows for high performance devices with highly strained active regions
    • Improved performance of green or UV LED’s and Laser Diodes
      • Allows misfit dislocations near the active region

Technology Applications

  • Green and UV LEDs and Laser Diodes
    • Solar cells
      • Transistors  

        •  

        This technology is available for licensing.

Technology page URL http://techtransfer.universityofcalifornia.edu/NCD/22365.html?utm_source=AUTMGTP&utm_medium=webpage&utm_term=ncdid_22365&utm_campaign=TechWebsites
Detailed Technology Description

Researchers at the University of California, Santa Barbara have developed a novel light-emitting device structure that reduces the effects of these misfit dislocations by maintaining low carrier loss in the active region of the device. Stress relief and low carrier escape help to increased device performance, thereby boosting optical output power and quality. This approach allows for high performance devices with highly strained active regions by overcoming the negative effects associated with misfit dislocations. By allowing misfit dislocations near the active region, this invention opens up significant design opportunities.
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Additional Information
Background

Today, the performance of green light-emitting diodes (LEDs) and laser diodes (LDs) is much poorer than that of equivalent devices emitting blue or violet light. Manufacturing green LEDs and laser diodes requires use of Indium, however, techniques used to grow Indium and Gallium in the same device degrade crystal quality and can lead to significant carrier loss in the active region because of the introduction of misfit dislocations.

Additional Technologies by these Inventors
  • Fabrication Of High Quality P-Type GaN and Alloys by Preventing Hydrogen Incorporation
  • Self-Assembled Nano-Cluster And Quantum Dot Lattices
  • Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
  • Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
  • Nonpolar (Al, B, In, Ga)N Quantum Well Design
  • Electrically-Pumped Vertical-Cavity Surface-Emitting Laser (VCSEL)
  • Improved Manufacturing of Semiconductor Lasers
  • High Efficiency LED With Emitters Within Structured Materials
  • Asymmetrically Cladded Laser Diode with Improved Performance
  • Yellow-Emitting Phosphors for White LEDs
  • Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
  • Etching Technique for the Fabrication of Thin (Al, In, Ga)N Layers
  • Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
  • Device Structure for High Efficiency LED
  • Nitride-Based LED with Optimized Efficiency
  • Selective Dry Etching of N-Face (Al, In, Ga)N Heterostructures
  • High-Efficiency, White, Single, or Multi-Color LED by Photon Recycling
  • GaN-Based Thermoelectric Device for Micro-Power Generation
  • Mirrorless LED with High Luminous Efficiency
  • Method for Producing GaN Substrates for Electronic and Optoelectronic Devices
  • Hybrid Inorganic Light-Emitting Devices
  • Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
  • Method for Growing High-Quality Group III-Nitride Crystals
  • Growth of Planar Semi-Polar Gallium Nitride
  • Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
  • MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
  • Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
  • Low Temperature Deposition of Magnesium Doped Nitride Films
  • Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
  • Long Wavelength Nonpolar and Semipolar Nitride-Based Laser Diodes
  • Semipolar III-Nitride Laser Diodes with Etched Mirrors
  • Fabrication of Optoelectronic Devices with Embedded Void-Gap Structures
  • Method for Making a High Performance Vertical Cavity Surface Emitting Laser
  • Use of Flux Method to Grow Seed Crystals for Ammonothermal Growth of Group-III Nitride Crystal Crystal Growth
  • Method for Ammonothermal Growth of Highly Pure Group-III Nitrides
  • LED Structure with Low Efficiency Droop for High-Current Applications
  • Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
  • High Efficiency Group-III Nitride/Non-Group-III Nitride Tandem Solar Cells
  • Control of Photoelectrochemical (PEC) Etching by Modification of the Local Electrochemical Potential of the Semiconductor Structure
  • Phosphor-Free White Light Source
  • Method for Wafer Bonding for Optoelectronic Applications
  • Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
  • High Efficiency LED with Optimized Photonic Crystal Extractor
  • Wafer Bonding For Highly Efficient Nitride-Based LEDs
  • Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
  • LED Device Structures with Minimized Light Re-Absorption
  • High Efficiency and High Brightness LEDs for Various Lighting Applications
  • Photoelectrochemical Etching for Laser Facets
  • Enhancement Of Thermoelectric Properties Through Polarization Engineering
  • Improved Gallium Nitride (GaN) Thermoelectric Devices
  • Two dimensionally relaxed III-N buffer layers for LEDs
  • Novel Layer Structure for Semipolar InGaN/GaN LEDs and Laser Diodes
  • Efficient High-Power, Laser-Driven White Lighting Device
  • GaN-based Green/Red Light-Emitting Diodes With Low Voltage
  • Outdoor Street Light Fixture with Novel Laser Diode Light Source
  • Improved LED Performance via Optimized Polarization Properties
  • (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
  • Controlling Contact Resistivity of Transparent Conductive Layers of Optoelectronic Devices
Tech ID/UC Case
22365/2012-239-0
Related Cases
2012-239-0

Patent